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PD - 97201
PDP SWITCH
Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l150C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability
IRFI4229PBF
Key Parameters
250 300 38 32 150
D
VDS max VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max
D
V V m: A C
G
G
D
S
S
TO-220AB Full-Pak D S
G
Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) Typ. --- --- Max. 2.73 65 N Units C/W
Max.
30 19 12 72 32 46 18 0.37 -40 to + 150
Units
V A
W W/C C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case f Junction-to-Ambient f
Notes through are on page 8
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1
04/07/06
IRFI4229PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
250 --- --- 3.0 --- --- --- --- --- 26 --- --- 100 --- ---
Typ. Max. Units
--- 340 38 --- -12 --- --- --- --- --- 73 24 --- 770 1380 4480 400 100 270 4.5 7.5 --- --- 46 5.0 --- 20 250 100 -100 --- 110 --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC nA V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 11A e V mV/C A VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 11A VDD = 125V, ID = 11A, VGS = 10Ve VDD = 200V, VGS = 15V, RG= 5.1 L = 220nH, C= 0.3F, VGS = 15V VDS = 200V, RG= 5.1, TJ = 25C L = 220nH, C= 0.3F, VGS = 15V VDS = 200V, RG= 5.1, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz, VGS = 0V, VDS = 0V to 200V Between lead, 6mm (0.25in.) from package and center of die contact
G S D
VDS = VGS, ID = 250A
Ciss Coss Crss Coss eff. LD LS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
--- --- --- --- --- ---
Avalanche Characteristics
Parameter Typ. Max. Units mJ mJ V A
EAS EAR VDS(Avalanche) IAS
Single Pulse Avalanche Energyd Repetitive Avalanche Energy c Repetitive Avalanche Voltage Avalanche Current d c
--- --- 300 ---
110 4.6 --- 11
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 120 540 72 1.3 180 810 V ns nC
Min.
---
Typ. Max. Units
--- 18 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V e TJ = 25C, IF = 11A, VDD = 50V di/dt = 100A/s e
2
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IRFI4229PBF
1000
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10 5.0V 1
1
0.1
5.0V
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 150C 10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
3.0 ID = 11A 2.5 2.0 1.5 1.0 0.5 0.0
ID, Drain-to-Source Current (A)
VDS = 25V 60s PULSE WIDTH
VGS = 10V
10
1
T J = 150C
T J = 25C
0.1 3 4 5 6 7
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
1400 1200
Energy per Pulse (J)
Fig 4. Normalized On-Resistance vs. Temperature
1400
1000 800 600 400 200 140 150 160 170 180 190 200 210
Energy per Pulse (J)
L = 220nH C = 0.3F 100C 25C
1200 1000 800 600 400 200 0
L = 220nH C = variable 100C 25C
100
110
120
130
140
150
160
170
VDS, Drain-to-Source Voltage (V)
ID, Peak Drain Current (A)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
Fig 6. Typical EPULSE vs. Drain Current
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IRFI4229PBF
1800 1600 1400
Energy per Pulse (J)
100
L = 220nH C = 0.3F
ISD, Reverse Drain Current (A)
1200 1000 800 600 400 200 0 20 40 60 80 100 120 140 160 C = 0.1F C = 0.2F
10
T J = 150C
1
T J = 25C
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V)
Temperature (C)
Fig 7. Typical EPULSE vs.Temperature
7000 6000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 8. Typical Source-Drain Diode Forward Voltage
12.0 ID= 11A
VGS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0
5000 4000 3000 2000 1000 0 1
VDS= 200V VDS= 125V VDS= 50V
Ciss
Coss
Crss 10 100 1000
0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
20 18 16
ID, Drain Current (A)
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 10 1msec 10msec
ID, Drain-to-Source Current (A)
100
14 12 10 8 6 4 2 0 25 50 75 100 125 150 T C , Case Temperature (C)
1
0.1
Tc = 25C Tj = 150C Single Pulse 1 10 100 1000
0.01 VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
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IRFI4229PBF
RDS(on), Drain-to -Source On Resistance (m )
200 180 160 140 120 100 80 60 40 20 0 5 6 7 8 9 10 T J = 25C T J = 125C
450
EAS , Single Pulse Avalanche Energy (mJ)
ID = 11A
400 350 300 250 200 150 100 50 0 25 50 75
ID TOP 2.3A 2.7A BOTTOM 11A
100
125
150
Fig 13. On-Resistance vs. Gate Voltage
5.0
VGS(th) , Gate Threshold Voltage (V)
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Temperature
60 50
Repetitive Peak Current (A)
ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse
4.0 ID = 250A
40 30 20 10
3.0
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
0 25 50 75 100 125 150 Case Temperature (C)
Fig 15. Threshold Voltage vs. Temperature
10 D = 0.50 0.20 0.10 0.05 0.02 0.01
Fig 16. Typical Repetitive peak Current vs. Case temperature
Thermal Response ( Z thJC )
1
0.1
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
0.01 SINGLE PULSE ( THERMAL RESPONSE )
Ri (C/W) i (sec) 0.3671 0.000287 1.0580 1.3076 0.162897 2.426
1
2
0.001
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 1 10 100
0.0001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFI4229PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFI4229PBF
A
RG
DRIVER L
C
VCC
B
RG
Ipulse DUT
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
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IRFI4229PBF
TO-220AB Full-Pak Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Full-Pak Part Marking Information
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TO-220AB Full-Pak packages are not recommended for Surface Mount Application.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.9mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/06
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